EUV Technology

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Shortwave radiation with wavelengths in the range of 2 to 20 nm opens up new possibilities for the structuring and analysis of surfaces on the nanometer scale. A relevant application for the semiconductor industry is chip fabrication using EUV lithography at a wavelength of 13.5 nm. Within the field of EUV technology, Fraunhofer ILT is currently focusing on compact, plasma-based radiation sources. The EUV radiation is generated either in a gas discharge or by firing at a target with a pulsed laser. Areas of application are in the field of EUV lithography, nanostructuring, X-ray microscopy or reflectometry for the analysis of surfaces.

The range of services includes feasibility studies on customer-specific tasks, integration of EUV technology in production processes and individual consultation.

Discharge-based EUV radiation source for wavelengths in the range 2 - 20 nm.
© Fraunhofer ILT, Aachen, Germany.
Discharge-based EUV radiation source for wavelengths in the range 2 - 20 nm.
Image of a discharge plasma in the visible spectrum.
© Fraunhofer ILT, Aachen, Germany.
Image of a discharge plasma in the visible spectrum.
EUV camera for the measurement of intensity distributions at a wavelength of 13.5 nm.
© Fraunhofer ILT, Aachen, Germany.
EUV camera for the measurement of intensity distributions at a wavelength of 13.5 nm.

Plasma-Based EUV Sources

  • Light sources for EUV lithography
  • Light sources for x-ray microscopy
  • Power electronics, power supplies
  • Pulsed current generators
  • Rapid data acquisition and control engineering of pulsed plasma sources


  • Characterization of light sources (photon flux, brilliance)
  • Characterization of optical components and optical systems

System Solutions

  • Design of optical systems for EUV applications
  • Optic simulation
  • Integration of plasma sources
  • Debris mitigation for plasma sources
  • Realization of complete systems

EUV-Based Applications

  • X-ray microscopy
  • EUV microscopy for mask inspection
  • Nano structuring using interference lithography
  • EUV reflectometry (analysis of surfaces and nano layer systems)
  • Defect inspection of EUV masks


Our flyers offer a quick view onto the service portfolio “EUV Technology“. Find more detailed information in the “project results“ tab.


Flyer “Compact EUV Sources for Lithography and Metrology Applications“


Flyer “Plasma Technology in the Department of Measurement Technology and EUV Sources“


Laser technology can solve demanding tasks in many different industries. Whether as a tool in automotive production, as measuring equipment in the environmental sector, as a diagnostic or therapeutic instrument in medical technology or as a communication medium in space technology, the laser provides multiple uses with high productivity and high efficiency.

Read up about the innovations of the Fraunhofer ILT in a few selected industries and convince yourself!


Baksh, P.D., Odstrčil, M., Kim, H.-S., Boden, S. A., Frey, J. G., Brocklesby, W.S.:
Wide-field broadband extreme ultraviolet transmission ptychography using a high-harmonic source
Opt. Lett. 41 (13), 1317-1320 (2016)

Beyene, G. A., Tobin, I., Juschkin, L., Hayden, P., O'Sullivan, G., Sokell, E., Zakharov, V. S., Zakharov, S. V., O'Reilly, F.:
Laser-assisted vacuum arc extreme ultraviolet source: a comparison of picosecond and nanosecond laser triggering
J. Phys. D: Appl. Phys. 49, 225201 (10 S.) (2016)

Brose, S., Danylyuk, S., Tempeler, J., Kim, Hyun-su, Loosen, P., Juschkin, L.:
Enabling laboratory EUV research with a compact exposure tool
Proc. SPIE 9776 (17 S.) (2016)

Bußmann, J., Odstrcil, M., Bresenitz, R., Rudolf, D., Miao, J., Brocklesby, W.S., Juschkin, L.:
Coherent Diffractive Imaging with a Laboratory-Scale, Gas-Discharge Plasma Extreme Ultraviolet Light Source
X-Ray Lasers 2014. Proceedings of the 14th International Conference on X-Ray Lasers. J. Rocca, C. Menoni, M. Marconi (Eds.)
Cham: Springer (2016) 275-280, Springer Proceedings in Physics 216 

Carstens, H., Högner, M., Saule, T., Holzberger, S., Lilienfein, N., Guggenmos, A, Jocher, C., Eidam, T., Esser, D., Tosa, V. , Pervak, V., Limpert, J., Tünnermann, A., Kleineberg, U., Krausz, F., Pupeza, I.:
High-harmonic generation at 250  MHz with photon energies exceeding 100  eV.
Optica 3 Nr. 4, 366-369 (2016)

Kim, H., Baksh, P., Odstrcil,M., Miszczak, M., Frey, J. G., Juschkin, L., Brocklesby, W. S.:
Lloyd's mirror interference lithography with EUV radiation from a high-harmonic source
Appl. Phys. Expr. 9, 7, 76701 (4 S.) (2016)

Kim, H., Danylyuk, S., Brocklesby, W. S., Juschkin, L.:
Single exposure imaging of Talbot carpets and resolution characterization of detectors for micro- and nano- patterns
J. Opt. Soc. Korea 20, (2) 245-250 (2016)

Kim, H., Danylyuk, S., Brose, S., Loosen, P., Bergmann, K., Brocklesby, W.S., Juschkin, L.:
Lensless proximity EUV lithography with a Xenon gas discharge plasma radiation
Proceedings of the 14th International Conference on X-Ray Lasers. J. Rocca, C. Menoni, M. Marconi (Eds.), 313-319, Springer Proceedings in Physics 216 (2016)

Kim, H., Li, W., Marconi, M. C., Brocklesby, W. S., Juschkin, L.:
Restorative self-image of rough-line grids: Application to Coherent EUV Talbot lithography
IEEE Photonics J. 8 (3), 2600209 (9 S.) (2016)

Schmitz, C., Wilson, D., Rudolf, D., Wiemann, C., Plucinski, L., Riess, S., Schuck, M., Hardtdegen, H., Schneider, C. M., Tautz, F. S., Juschkin, L.:
Compact extreme ultraviolet source for laboratory-based photoemission spectromicroscopy
Appl. Phys. Lett. 108, 234101 (5 S.) (2016)

Sertsu, M. G., Giglia, A., Brose, S., Park, D., Wang, Z. S., Mayer, J., Juschkin, L., Nicolosi, P.:
Deposition and characterization of B4C/CeO2 multilayers at 6.x nm extreme ultraviolet wavelengths
J. Appl. Phys. 119, 095301 (7 S.) (2016)

Bahrenberg, L., Herbert, S., Tempeler, J., Maryasov, A., Hofmann, O., Danylyuk, S., Lebert, R., Loosen, P., Juschkin, L.:
Analysis of distinct scattering of extreme ultraviolet phase and amplitude multilayer defects with an actinic dark-field microscope
Proceedings of SPIE 9422, (9 S.) (2015)

Danylyuk, S., Herbert, S., Loosen, P., Lebert, R., Schäfer, A., Schubert, J., Tryus, M., Juschkin, L.:
Multi-angle spectroscopic extreme ultraviolet reflectometry for analysis of thin films and interfaces
Phys. Stat. Sol. C 12 (3), 318-322 (2015)

Herbert, S., Bahrenberg, L., Maryasov, A., Danylyuk, S., Loosen, P., Juschkin, L., Bergmann, K., Lebert, R.:
Table-Top EUV and Soft X-Ray Microscopy
Imaging & Microsc. 2015 (May 26), 3 S. (2015)

Kunkemöller, G., Maß, T. W. W., Michel, A.-K. U., Kim, H.-S., Brose, S., Danylyuk, S., Taubner, T., Juschkin, L.:
Extreme ultraviolet proximity lithography for fast, flexible and parallel fabrication of infrared antennas
Opt. Expr. 23 (20), 25487-25495 (2015)

Reininghaus, M., Ivanov, D., Maß, T.W.W., Eckert, S., Juschkin, L., Garcia, M. E., Taubner, T., Poprawe, R.:
Nanophotonic applications of fs-laser radiation induced nanostructures and their theoretical description
In: Optically Induced Nanostructures,
Hrsg. v. König, Karsten / Ostendorf, Andreas, Berlin,
De Gruyter, 25-46 (2015)

Rudolf, D., Bußmann, J., Odstrcil, M., Dong, M., Bergmann, K., Danylyuk, D., Juschkin, L.:
Interferometric broadband Fourier spectroscopy with a partially coherent gas-discharge extreme ultraviolet light source
Optics Letters 40, 2818-2821 (2015)

Teramoto, Y., Santos, B., Mertens, G., Kops, R., Kops, M., von Wezyk, A., Yabuta, H., Nagano, A., Shirai, T., Ashizawa, N., Nakamura, K., Kasama, K.:
High-radiance LDP source for mask-inspection application
Proc. SPIE 9422, 94220F, (9 S.) (2015)

Wilson, D., Rudolf, D., Weier, C., Adam, R., Winkler, G., Frömter, R., Danylyuk, S., Bergmann, K., Grützmacher, D., Schneider, C. M., Juschkin, L.:
Generation of circularly polarized radiation from a compact plasma-based extreme ultraviolet light source for tabletop X-ray magnetic circular dichroism studies
Rev. Scient. Instr. 85 (10), 103110 (9 S.) (2014)

Danylyuk, S., Kim, H., Brose, S., Dittberner, C., Loosen, P., Taubner, T., Bergmann, K., Juschkin, L.:
Diffraction-assisted extreme ultraviolet proximity lithography for fabrication of nanophotonic arrays
J. Vac. Sci. Technol. B 31(2), 21602/1-21602/6

Danylyuk, S., Loosen, P., Bergmann, K., Kim, H., Juschkin, L.:
Scalability limits of Talbot lithography with plasma-based extreme ultraviolet sources
J. Micro/Nanolith. MEMS MOEMS 12, 033002 (7 S.), (2013)

Juschkin, L., Lötgering, L., Rudolf, D., Xu, R., Brose, S., Danylyuk, S., Miao, J.:
Tabletop coherent diffraction imaging with a discharge plasma EUV source
Proc. SPIE 8849, 88490Y (9 S.) (2013)

Brose, S., Danylyuk, S., Juschkin, L., Dittberner, C., Bergmann, K., Moers, J., Panaitov, G., Trellenkamp, St. , Loosen, P., Grützmacher, D.:
Broadband transmission masks, gratings and filters for extreme ultaviolet and soft X-ray lithography
Thin Solid Films 520, 5080-5085, (2012)

Freiberger, R., Hauck, J., Lvovsly, D., Adam, R., Danylyuk, S., Juschkin, L.:
Gateable micro channel plate detector for extreme ultraviolet radiation with high temporal resolution
JARA FIT Jülich-Aachen Research Alliance - Annual Report 2011
145-146, (2012)

Herbert, S., Banyay, M., Maryasov, A. P., Hochschulz, F., Paschen, U., Vogt, H., Juschkin, L.
Quantum efficiency determination of a novel CMOS design for fast imaging applications in the extreme ultraviolet 
IEEE Transact. Electron Dev. Online first 4 S., (2012)

Farahzadi, A., Lebert, R., Benk, M., Juschkin, L., Herbert, S., Maryasov, A.:
Contributions to EUV mask metrology infrastructure 
Proc. SPIE 7545, 754505, 5 S., (2011)

Freiberger, R., Hauck, J., Reininghaus, M., Wortmann, D., Juschkin, L.:
Time resolved EUV pump-probe microscopy of fs-LASER induced nanostructure formation 
Proc. SPIE 8076, 80760K, 7 S., (2011)

Hauck, J., Freiberger, R., Juschkin, L.:
Performance benchmark of a gateable microchannel plate detector for extreme ultraviolet radiation with high temporal resolution. 
Proc. SPIE 8076, 80760R, 7 S., (2011)

Juschkin, L., Maryasov, A., Herbert, S., Aretz, A., Bergmann, K., Lebert, R.:
EUV dark-field microscopy for defect inspection. 
AIP Conf. Proc. 1365, 265-268, (2011)

Maryasov, A., Herbert, S., Juschkin, L., Lebert, R., Bergmann, R.:
EUV actinic mask blank defect inspection: results and status of concept realization. 
Proc. SPIE 7985, 79850C, 8 S., (2011)

Banyay, M., Juschkin, L.
Spectral sharpening algorithm for a polychromatic reflectometer in the extreme ultraviolet
Appl. Spectrosc. 64, 401-408, (2010)

Verbraak, H., Küpper, F., Jonkers, J., Bergmann, K.
Angular ion emission characteristics of a laser triggered tin vacuum arc as light source for extreme ultraviolet lithography 
J. Appl. Phys. 93304, 6 S., (2010)

Wortmann, D., Reininghaus, M., Juschkin, L., Freiberger, R.
EUV-pump-probe microscopy of FS-Laser induced nano-structure formation
ICALEO 2010. 29th International Congress on Applications of Lasers & Electro Optics, Anaheim/Ca., September 26-30, 2010. N107, 4 S.,

M. Benk, K. Bergmann
Adaptive spatially resolving detector for the extreme ultraviolet with absolute measuring capability
Rev. Sci. Instr.
80, 331131-331136, (2009)

M. Banyay, L. Juschkin, P. Loosen, M. Roeckerath, J. Schubert
Characterization of ultra-thin layers in MOS-devices with XUV reflectometry
JARA FIT Jülich-Aachen Research Alliance for Fundamentals of Future Information Technology - Annual Report 2008
pp. 47-48, (2009)

L. Juschkin, R. Freiberger, K. Bergmann
EUV microscopy for defect inspection by dark-field mapping and zone plate zooming
J. Phys.: Conf. Ser.
186, 1-3, (2009)

M. Benk, D. Schäfer, T. Wilhein, K. Bergmann
High power soft x-ray source based on a discharge plasma
J. Phys.: Conf. Ser.
186, 012024 3 S., (2009)

M. Banyay, S. Brose, L. Juschkin
Line image sensors for spectroscopic applications in the extreme ultraviolet
Meas. Sci. Technol. 20, 105201, 5 S., (2009)

D. Schäfer, M. Benk, K. Bergmann, T. Nisius, U. Wiesemann, T. Wilhein
Optical setup for tabletop soft X-ray microscopy using electrical discharge sources
J. Phys.: Conf. Ser.
186, 063507, 3 S., (2009)

K. Bergmann, S.V. Danylyuk, L. Juschkin,
Optimization of a gas discharge plasma source for extreme ultraviolet interference lithography at a wavelength of 11 nm
J. Appl. Phys.
106, 073309, 5 S., (2009)

M. Banyay, L. Juschkin
Table-top reflectometer in the extreme ultraviolet for surface sensitive analysis
Appl. Phys. Lett.
94, 1-3, (2009)

L. Juschkin, R. Freiberger
Two magnification steps EUV microscopy with a Schwarzschild objective and an adapted zone plate lens
Proc. SPIE
7360, 736005, 8 S., (2009)

S. Danylyuk, L. Juschkin, S. Brose, K. Bergmann, P. Loosen [u.a.]
XUV interference lithography for sub-10 nm patterning
JARA FIT Jülich-Aachen Research Alliance - Annual Report 2008
pp. 49-50, (2009)

M. Banyay, L. Juschkin, T. Bücker, P. Loosen [u.a.]
XUV metrology: Surface analysis with Extreme Ultraviolet Radiation
Proc. SPIE
7361, 736113-1-736113-12, (2009)

Our services cover a wide range of topics. Related topics to EUV technology and further research and development focuses can be found under the following links.